METHOD FOR FABRICATING SEMICONDUCTOR DEVICE TO IMPROVE STORAGE NODE CONTACT RESISTANCE OF MEMORY CELL

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to prevent the increase of first and second contact plugs by removing a polymer. CONSTITUTION: A transistor is formed on a substrate(30). A first interlayer dielectric(31) having a contact hole is formed on a source/drain region of the substrate. A first contact plug(32) is formed within the contact hole. A bit line(33) is formed on the first interlayer dielectric. A sidewall spacer(35a) is formed on both sides of the bit line. A second interlayer dielectric(36) is formed on the entire surface of the substrate including the bit line and the sidewall spacer. A self-aligned contact hole(40) is formed by etching second interlayer dielectric. A postprocess for the self-aligned contact hole is performed by using NF3+He+O2 gas. A second contact plug for storage node contact is formed only within the self-aligned contact hole.