| 摘要 |
PURPOSE: A non-volatile ferroelectric memory and a method for controlling the same are provided to minimize the consumption power due to the chip operation by directly outputting the data stored at the page buffer without performing the cell access operation during the access of the page buffer. CONSTITUTION: A non-volatile ferroelectric memory includes a page address buffer, a row address latch unit(40), an address shift detection unit(70) and a chip control signal generation unit(100). The page address buffer decodes the page address by latching it in response to the chip enable signal. The row address latch unit outputs the latched row address by latching the row address in response to the chip enable signal. The address shift detection unit outputs the address shift detection signal by detecting the shift state of the latched row address. And, the chip control signal generation unit selectively generates the control signal to control the chip operation in response to the address shift detection signal.
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