| 摘要 |
A method of fabricating an electronic component is disclosed in which an electrically conductive layer (4) is provided upon a substrate (2). A mask (6) having a window (8) is provided upon the layer and by etching, preferably chemically, through the window an opening (10) the conductive layer. Conductive material is deposited, preferably by vapor deposition, through the window to form an island in the opening. The etching of the conductive layer is carried out such that the conductive layer is undercut at the periphery of the window with the result that the periphery of the island is spaced apart from the periphery of the opening. Also disclosed is a thin film transistor structure well suited to fabrication by the above described method.
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