CMOS IMAGE SENSOR FOR PREVENTING FOLIATION AND CRACK OF LTO LAYER IN PAD REGION DUE TO OPENING OF PAD AND CUTTING OF WAFER

摘要

PURPOSE: A CMOS(Complementary Metal Oxide Semiconductor) image sensor is provided to prevent foliation and crack of an LTO(Low Temperature Oxide) layer in a pad region due to opening of a pad and cutting of a wafer, thereby enhancing yield and optical characteristic of the CMOS image sensor by forming an OCL(Over Coating Layer) overlapping only the edge of the metal pad pattern. CONSTITUTION: A pad region and a pixel region are designated in a semiconductor substrate(30). A metal pad pattern(31) is formed on the pad region. A passivation layer(32) exposing a pad(PAD2) of the metal pad pattern is formed on the metal pad pattern and the substrate. An OCL(33) is formed on the passivation layer to overlap only the edge of the metal pad pattern. An LTO layer(34) covering the OCL is formed on the passivation layer.