发明名称 CATHODE OF MAGNETRON SPUTTERING PROCESS AND MAGNETRON SPUTTERING METHOD CAPABLE OF PREVENTING CRACK AND DEGRADATION OF TARGET
摘要 PURPOSE: To minimize crack and degradation of target and improve deposition ratio and minimize wattage supplied by maximizing electric discharge region on the surface of the target without increase of the wattage supplied. CONSTITUTION: The cathode comprises a target (11) installed at the outer side of case (10) and formed of a deposition material; a magnetron (12) installed inside the case to form a magnetic field on the surface of the target during sputtering deposition; and a cooling part (13) for circulating cooling water to the magnetron to cool heat of the target generated during sputtering deposition, wherein the magnetron is separately installed at two regions at least or more to separate an electric discharge region of the surface of the target, wherein the cooling part is arranged between the separated magnetrons. The magnetron sputtering method lowers electric discharge voltage and increases current density of plasma by separating the electric discharge region into a plurality of electric discharge regions.
申请公布号 KR20040095850(A) 申请公布日期 2004.11.16
申请号 KR20030026843 申请日期 2003.04.28
申请人 SAMSUNG SDI CO., LTD. 发明人 HUH, MYEONG SU;HYUN, IN GEOL;PARK, JIN;SONG, GWAN SEOP
分类号 C23C14/35;(IPC1-7):C23C14/35 主分类号 C23C14/35
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