| 摘要 |
The invention concerns a bidirectional switch formed in a N-type semiconductor substrate, comprising a first main vertical thyristor whereof the rear face layer is of P-type conductivity, a second main vertical thyristor whereof the rear face layer is N-type, a P-type peripheral region extending from the front face to the rear face, a first metallization covering the rear face, a second metallization on the front face side connecting the front face layers of the first and second thyristor, and a N-type gate region in part of the upper surface of the peripheral region.
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