| 摘要 |
A method of fabricating a copper-containing structure, preferably within a microelectronic device, including a rapid temperature ramp from about 20 degrees Celsius up to between about 300 and 500 degrees Celsius, preferably about 400 degrees Celsius, at a rate of between about 20 and 60 degrees Celsius per second, preferably about 40 degrees Celsius per second.
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