发明名称 Split contact structure and fabrication method thereof
摘要 A split contact structure includes a semiconductor substrate having a major surface; a first upwardly protruding structure disposed on the major surface; a first cell contact region in the major surface and being close to the first upwardly protruding structure; a second upwardly protruding structure disposed on the major surface; a second cell contact region in the major surface and being close to the second upwardly protruding structure; a first patterned layer stacked on the first upwardly protruding structure; a second patterned layer stacked on the first upwardly protruding structure; a first contact structure disposed on a sidewall of the first upwardly protruding structure and being in direct contact with the first cell contact region; and a second contact structure disposed on a sidewall of the second upwardly protruding structure and being in direct contact with the second cell contact region.
申请公布号 US9401326(B1) 申请公布日期 2016.07.26
申请号 US201514720830 申请日期 2015.05.24
申请人 INOTERA MEMORIES, INC. 发明人 Hsu Cheng-Yeh;Huang Hsin-Pin;Cheng Chih-Hao
分类号 H01L21/8242;H01L23/528;H01L23/532;H01L27/108 主分类号 H01L21/8242
代理机构 代理人 Hsu Winston;Margo Scott
主权项 1. A split contact structure, comprising: a semiconductor substrate having a major surface; a first upwardly protruding structure disposed on the major surface; a first cell contact region in the major surface and being close to the first upwardly protruding structure; a second upwardly protruding structure disposed on the major surface; a second cell contact region in the major surface and being close to the second upwardly protruding structure; a shallow trench isolation (STI) region between the first cell contact region and the second cell contact region; wherein the first cell contact region and the second cell contact region are both in contiguous with the STI region; a first patterned layer stacked on the first upwardly protruding structure; a second patterned layer stacked on the second upwardly protruding structure; a first contact structure disposed on a sidewall of the first upwardly protruding structure and being in direct contact with the first cell contact region, wherein the first patterned layer protrudes from a top surface of the first contact structure; and a second contact structure disposed on a sidewall of the second upwardly protruding structure and being in direct contact with the second cell contact region, wherein the second patterned layer protrudes from a top surface of the second contact structure.
地址 Guishan Dist., Taoyuan TW