发明名称 |
Split contact structure and fabrication method thereof |
摘要 |
A split contact structure includes a semiconductor substrate having a major surface; a first upwardly protruding structure disposed on the major surface; a first cell contact region in the major surface and being close to the first upwardly protruding structure; a second upwardly protruding structure disposed on the major surface; a second cell contact region in the major surface and being close to the second upwardly protruding structure; a first patterned layer stacked on the first upwardly protruding structure; a second patterned layer stacked on the first upwardly protruding structure; a first contact structure disposed on a sidewall of the first upwardly protruding structure and being in direct contact with the first cell contact region; and a second contact structure disposed on a sidewall of the second upwardly protruding structure and being in direct contact with the second cell contact region. |
申请公布号 |
US9401326(B1) |
申请公布日期 |
2016.07.26 |
申请号 |
US201514720830 |
申请日期 |
2015.05.24 |
申请人 |
INOTERA MEMORIES, INC. |
发明人 |
Hsu Cheng-Yeh;Huang Hsin-Pin;Cheng Chih-Hao |
分类号 |
H01L21/8242;H01L23/528;H01L23/532;H01L27/108 |
主分类号 |
H01L21/8242 |
代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
主权项 |
1. A split contact structure, comprising:
a semiconductor substrate having a major surface; a first upwardly protruding structure disposed on the major surface; a first cell contact region in the major surface and being close to the first upwardly protruding structure; a second upwardly protruding structure disposed on the major surface; a second cell contact region in the major surface and being close to the second upwardly protruding structure; a shallow trench isolation (STI) region between the first cell contact region and the second cell contact region; wherein the first cell contact region and the second cell contact region are both in contiguous with the STI region; a first patterned layer stacked on the first upwardly protruding structure; a second patterned layer stacked on the second upwardly protruding structure; a first contact structure disposed on a sidewall of the first upwardly protruding structure and being in direct contact with the first cell contact region, wherein the first patterned layer protrudes from a top surface of the first contact structure; and a second contact structure disposed on a sidewall of the second upwardly protruding structure and being in direct contact with the second cell contact region, wherein the second patterned layer protrudes from a top surface of the second contact structure. |
地址 |
Guishan Dist., Taoyuan TW |