METHOD FOR CLEANING DEPOSITION CHAMBER FOR METAL OXIDE LAYER AND DEPOSITION APPARATUS FOR PERFORMING THE SAME REGARDIG TO RAPID ETCHING OF METAL OXIDE LAYER DEPOSITED IN DEPOSITION CHAMBER

摘要

PURPOSE: A method for cleaning a deposition chamber for a metal oxide layer is provided to clean a deposition chamber having a deposited metal oxide layer by an in-situ method while the deposition chamber is not open or separated, and to shorten an interval of cleaning time by rapidly etching the metal oxide layer deposited in the deposition chamber. CONSTITUTION: The metal oxide layer is deposited on the inner surface of the deposition chamber(10). The first RF(radio frequency) power is applied to the inside of the deposition chamber to relatively increase a plasma sheath potential in a portion of the deposition chamber where the metal oxide layer is relatively thick. Etch gas for etching the metal oxide layer is introduced to the deposition chamber to etch the metal oxide layer.