发明名称 Methods of forming contact holes using multiple insulating layers
摘要 The present invention provides methods of forming contact holes and integrated circuit devices having the same. A conductive plug is formed on a substrate. A first insulating layer is formed on the conductive plug and a second insulating layer is formed on the first insulating layer. The second insulating layer is etched to expose at least a portion of the first insulating layer and the first insulating layer is etched to expose at least a portion of the conductive plug.
申请公布号 US6818551(B2) 申请公布日期 2004.11.16
申请号 US20020241026 申请日期 2002.09.11
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JIN BEOM-JUN;KIM YOUNG-PIL
分类号 H01L21/28;H01L21/02;H01L21/60;H01L21/768;H01L21/8242;H01L27/108;(IPC1-7):H01L21/476 主分类号 H01L21/28
代理机构 代理人
主权项
地址