| 摘要 |
A gallium nitride (GaN) based optical device and a fabrication method thereof are provided. The GaN based optical device includes a substrate, a p-type GaN (p-GaN) layer formed on the substrate, and a p-type ohmic electrode formed on the p-GaN layer, wherein the p-type ohmic electrode is formed of a triple layer comprised of a nickel (Ni) layer, a gold (Au) layer and an indium tin oxide (ITO) layer sequentially formed. The thicknesses of the Ni layer and the Au layer forming the triple layer are smaller than the thickness of the ITO layer. When the p-type ohmic electrode in the GaN based optical device is formed of a triple layer comprised of Ni/Au/ITO, the Ni/Au layers reduce contact resistance and the ITO, which is a transparent, conductive oxide layer, increases transparency and increases luminescence efficiency.
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