发明名称 |
Ferroelectric resistor non-volatile memory array |
摘要 |
A ferroelectric thin film resistor memory array is formed on a substrate and includes plural memory cells arranged in an array of rows and columns; wherein each memory cell includes: a FE resistor having a pair of terminals, and a transistor associated with each resistor, wherein each transistor has a gate, a drain and a source, and wherein the drain of each transistor is electrically connected to one terminal of its associated resistor; a word line connected to the gate of each transistor in a row; a programming line connected to each memory cell in a column; and a bit line connected to each memory cell in a column.
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申请公布号 |
US6819583(B2) |
申请公布日期 |
2004.11.16 |
申请号 |
US20030345726 |
申请日期 |
2003.01.15 |
申请人 |
SHARP LABORATORIES OF AMERICA, INC. |
发明人 |
HSU SHENG TENG;LI TINGKAI;ZHANG FENGYAN |
分类号 |
G11C11/22;G11C13/00;H01L27/10;(IPC1-7):G11C11/22 |
主分类号 |
G11C11/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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