发明名称 Diffusion barrier multi-layer structure for thin film transistor liquid crystal displays and process for fabricating thereof
摘要 A diffusion barrier multi-layer structure for a TFT LCD by the LTPS process and the process for fabricating thereof are disclosed. By increasing the coarseness between two layers of the diffusion barrier multi-layer structure with a plasma treatment, or by forming a loose and porous impurity collecting layer between two layers of the diffusion barrier multi-layer structure to trap the impurity atoms, the impurity diffusion can be effectively obstructed.
申请公布号 US6818319(B2) 申请公布日期 2004.11.16
申请号 US20030414282 申请日期 2003.04.16
申请人 AU OPTRONICS CORP. 发明人 TSAO I-CHANG;SUN MING-WEI
分类号 B32B9/00;H01L21/20;H01L21/22;H01L21/76;H01L21/77;H01L21/84;H01L27/095;H01L27/12;H01L29/02;H01L29/12;(IPC1-7):H01L29/02 主分类号 B32B9/00
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