发明名称 |
Diffusion barrier multi-layer structure for thin film transistor liquid crystal displays and process for fabricating thereof |
摘要 |
A diffusion barrier multi-layer structure for a TFT LCD by the LTPS process and the process for fabricating thereof are disclosed. By increasing the coarseness between two layers of the diffusion barrier multi-layer structure with a plasma treatment, or by forming a loose and porous impurity collecting layer between two layers of the diffusion barrier multi-layer structure to trap the impurity atoms, the impurity diffusion can be effectively obstructed.
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申请公布号 |
US6818319(B2) |
申请公布日期 |
2004.11.16 |
申请号 |
US20030414282 |
申请日期 |
2003.04.16 |
申请人 |
AU OPTRONICS CORP. |
发明人 |
TSAO I-CHANG;SUN MING-WEI |
分类号 |
B32B9/00;H01L21/20;H01L21/22;H01L21/76;H01L21/77;H01L21/84;H01L27/095;H01L27/12;H01L29/02;H01L29/12;(IPC1-7):H01L29/02 |
主分类号 |
B32B9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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