METHOD FOR FABRICATING SEMICONDUCTOR DEVICE TO IMPROVE RELIABILITY OF GAP FILLING INSULATION LAYER

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to improve the reliability of a gap filling insulation layer by filling the gap filling insulation layer in a trench after a surface treatment is performed on a liner oxide layer. CONSTITUTION: A trench of a desired depth is formed in an isolation region of a semiconductor substrate(S11). A liner oxide layer is formed on the surface of the exposed silicon substrate inside the trench(S12). A chemical surface treatment is performed on the liner oxide layer. The trench is filled with a gap filling insulation layer(S14).