| 摘要 |
PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to increase threshold voltage by restraining moat at trench top corner. CONSTITUTION: A trench is formed in a silicon substrate having a desired lower structure. A stress buffer oxide layer(130) is formed at inner walls of the trench. A liner nitride layer(140) is formed on the buffer oxide layer. Then, a first gap-fill oxide layer(150) is filled in the trench. The first gap-fill oxide layer is partially removed by over-wet dipping to expose the liner nitride layer. The exposed liner nitride layer is removed. Then, a second gap-fill oxide layer is entirely filled in the trench.
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