发明名称 |
Methods involving a low resistance magnetic tunnel junction structure |
摘要 |
The present disclosure describes methods for forming magnetic tunnel junction (MTJ) devices involving the use of diffusion components selected to alter the device properties. The magnetic tunnel junction structure is formed through diffusion components migrating from one layer of the MTJ structure to the tunneling barrier layer. Incorporation of the migrated components at the barrier layer adjusts the properties of the MTJ device.
|
申请公布号 |
US6818458(B1) |
申请公布日期 |
2004.11.16 |
申请号 |
US20030628956 |
申请日期 |
2003.07.29 |
申请人 |
HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS B.V. |
发明人 |
GILL HARDAYAL SINGH |
分类号 |
G11B5/39;H01L43/12;(IPC1-7):H01L21/00 |
主分类号 |
G11B5/39 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|