| 摘要 |
PURPOSE: A method for manufacturing semiconductor device is provided to raise doping density of a low doped P-type impurity region sufficiently, thereby preventing junction leakage current by selectively forming a high doped N-type impurity region under only drain region of the electro static discharge device. CONSTITUTION: A normal device region and an electro static discharge device region are designated in a substrate(11). The normal device region includes a gate electrode(15a), a source and a drain regions(16a,17a). The electro static discharge device region includes a gate electrode(15b), a source and a drain regions(16b,17b). The electro static discharge device region further includes a first conductive type(high doped N-type) impurity region(19) formed under the drain region and a second conductive type(low doped P-type) impurity region(20) formed under the first conductive type impurity region.
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