| 摘要 |
PURPOSE: A semiconductor laser diode and a method for manufacturing the same are provided to increase the lifetime of the device by insulating the p-clad layer between both sides of ridge stripe. CONSTITUTION: A semiconductor laser diode includes a substrate(201), a buffer layer(202), an n-clad layer(204), an active layer(205), a p-clad layer(206), a p-contact layer(208) and a p-metal layer(209). In the semiconductor laser diode, the central portion of the p-clad layer is protruded so as to perform the single longitudinal mode operation. The semiconductor laser diode is characterized in that the p-clad layer is changed into a semi-insulator by forming a donor level. The donor level is obtained by forming N depletion region through damaging the p-clad layer in both sides of p-clad layer in the process of etching to form the ridge stripe on the central portion of the p-clad layer.
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