发明名称 FABRICATING METHOD OF CMOS IMAGE SENSOR FOR IMPROVING SENSIBILITY BY FORMING BARRIER ON OVER-COATING LAYER FORMED ON COLOR FILTER BY USING TRANSFLECTIVE RETICLE
摘要 PURPOSE: A fabricating method of a CMOS image sensor is provided to improve the sensibility of the CMOS image sensor by preventing a bridge phenomenon. CONSTITUTION: A color filter(26) is formed on a substrate(20) having a lower structure including a photodiode. An over-coating layer(27) using a negative photoresist layer is formed on the color filter. A barrier for preventing a bridge is formed on the over-coating layer by performing a photo process using a reticle. The reticle is formed with a transflective layer and a transmissive layer. A micro-lens(28) is formed on the over-coating layer including the barrier for preventing the bridge.
申请公布号 KR20040095986(A) 申请公布日期 2004.11.16
申请号 KR20030027022 申请日期 2003.04.29
申请人 MAGNACHIP SEMICONDUCTOR, LTD. 发明人 SHIN, DAE UNG
分类号 H01L27/146;(IPC1-7):H01L27/146 主分类号 H01L27/146
代理机构 代理人
主权项
地址