发明名称 |
FABRICATING METHOD OF CMOS IMAGE SENSOR FOR IMPROVING SENSIBILITY BY FORMING BARRIER ON OVER-COATING LAYER FORMED ON COLOR FILTER BY USING TRANSFLECTIVE RETICLE |
摘要 |
PURPOSE: A fabricating method of a CMOS image sensor is provided to improve the sensibility of the CMOS image sensor by preventing a bridge phenomenon. CONSTITUTION: A color filter(26) is formed on a substrate(20) having a lower structure including a photodiode. An over-coating layer(27) using a negative photoresist layer is formed on the color filter. A barrier for preventing a bridge is formed on the over-coating layer by performing a photo process using a reticle. The reticle is formed with a transflective layer and a transmissive layer. A micro-lens(28) is formed on the over-coating layer including the barrier for preventing the bridge.
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申请公布号 |
KR20040095986(A) |
申请公布日期 |
2004.11.16 |
申请号 |
KR20030027022 |
申请日期 |
2003.04.29 |
申请人 |
MAGNACHIP SEMICONDUCTOR, LTD. |
发明人 |
SHIN, DAE UNG |
分类号 |
H01L27/146;(IPC1-7):H01L27/146 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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