| 摘要 |
PURPOSE: A method for forming a metal interconnection of a semiconductor device is provided to improve a filling characteristic of a metal thin film and avoid generation of a void by forming a spacer at both sides of a contact hole such that the spacer is composed of a diffusion blocking layer like a Ti layer or a TiN layer. CONSTITUTION: The first and second insulation layers(15,17) having a difference of etch selectivity are sequentially formed on a semiconductor substrate. A predetermined thickness of a part of the second insulation layer reserved for a metal interconnection contact is dry-etched until before the first insulation layer is exposed and the rest of the second insulation layer is eliminated by a wet etch process. A diffusion blocking layer is formed on the resultant structure. The diffusion blocking layer is blanket-etched to form a spacer on the sidewall of the second insulation layer. The first insulation layer is etched to form a contact hole for a metal interconnection by using the second insulation layer and the spacer as an etch mask. A conductive layer for the metal interconnection is formed on the resultant structure.
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