发明名称 METHOD FOR FABRICATING HIGH-LEVEL/LOW-LEVEL-DOPED SOLAR CELL AND OPTIC SYSTEM FOR THE SAME
摘要 <p>PURPOSE: A method for fabricating a high-level/low-level-doped solar cell and an optic system for the same are provided to enhance the energy conversion efficiency by improving a fabrication method. CONSTITUTION: A surface of a P-type silicon wafer is etched by an etching process. A texturing process is performed on the surface of the P-type silicon wafer. A high-level/low-level pn junction process is performed by a doping process. An n-doped part is separated from an edge by using a wet method. An oxide barrier is deposited thereon. A rear electrode is formed thereon. A front electrode is formed thereon. An electrode is formed.</p>
申请公布号 KR20040095009(A) 申请公布日期 2004.11.12
申请号 KR20030028602 申请日期 2003.05.06
申请人 KIM, KYOUNG HAI;LEE, PARK IL;YI, JUN SIN 发明人 KIM, KYOUNG HAI;LEE, PARK IL;YI, JUN SIN
分类号 H01L31/06;H01L31/04;H01L31/18;(IPC1-7):H01L31/04 主分类号 H01L31/06
代理机构 代理人
主权项
地址