METHOD FOR FORMING BARRIER METAL LAYER OF SEMICONDUCTOR DEVICE TO FORM STABLE CONTACT

摘要

PURPOSE: A method for forming a barrier metal layer of a semiconductor device is provided to form a stable contact by reducing contact resistance and a leakage current and by smoothening the operation of a semiconductor device and improving yield. CONSTITUTION: An interlayer dielectric is formed on a substrate(13) having various elements for forming a semiconductor device and a contact hole is formed in a selected region. The substrate having the contact hole is mounted on the sidewall of an ion metal plasma sputtering apparatus having an RF(radio frequency) coil(15). A titanium nitride layer(16) is deposited by using a titanium nitride target while RF is not applied to the RF coil, wherein the titanium nitride layer is deposited even on the substrate including the contact hole and on the RF coil exposed to plasma. While RF is applied to the RF coil to sputter the titanium nitride layer deposited on the RF coil, a titanium layer is deposited by using a titanium target, and a barrier metal layer is formed in a manner that the titanium nitride layer deposited on the RF coil is sputtered to be re-deposited on the substrate together with the titanium layer. A heat treatment process is performed.