| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a stencil mask blank and a stencil mask with stress optimally adjusted in the single-crystal silicon layer, in the manufacture of an SOI substrate-using stencil mask. <P>SOLUTION: In this stencil mask substrate comprising a supporting substrate composed of a single-crystal silicon wafer, a single-crystal silicon layer for pattern transfer, and an intermediate insulating film formed in between the supporting substrate and the single-crystal silicon layer, the impurity concentration level in the single-crystal silicon layer is established on the basis of the thickness of the intermediate insulating film. The stencil mask is provided with the impurity as phosphorus, and is manufactured out of the stencil mask substrate. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
