| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which increases the film thickness of an epitaxial layer in a part contributing to improvement of characteristics of a bipolar transistor without increasing the number of processes. SOLUTION: The method comprises a process for forming an N+ buried layer 3 in a region excepting a recessed part formation region in an upper part of a P-type silicon substrate 1, a process for diffusing impurities contained inside the N+ buried layer 3 to the recessed part formation region, a process for forming an N-type epitaxial layer 4 on the N+ buried layer and a process for forming a semiconductor element on the N+ buried layer. COPYRIGHT: (C)2005,JPO&NCIPI
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