SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device high in withstand voltage by preventing a punch-through at a trench corner. SOLUTION: The length (L1) of an n-body region 4 is increased by not forming a p-offset region 5 at the tip C of a trench 3, so that a punch-through is prevented which may otherwise occur when the depletion layer reaches the p-offset region 5 at a corner A upon application of a voltage across a p-source region 6 and a p-drain region 10. COPYRIGHT: (C)2005,JPO&NCIPI