| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of making the effective gate length of a gate electrode constant by the use of an offset spacer even the shape of the gate electrode is a vertical shape, a forward tapered shape, or an inverse tapered shape, and to provide a method for manufacturing it. SOLUTION: A gate insulating film 2 is formed on a semiconductor substrate 1 and a gate electrode 3 is formed on the film 2. An offset spacer 4 is formed on the side of the film 2 and the electrode 3. A diffusion layer 5 is formed by an ion implantation on the substrate 1 positioning on both sides of the electrode 3. The shape of the gate electrode 3 is a vertical shape (a), a forward tapered shape (b), or an inverse tapered shape (c), and the length of the gate length of the gate electrode positioning at the boundary with the gate insulating film and the width of the offset spacer positioning at the boundary with the semiconductor substrate is approximately constant by varying the shape of the offset spacer 4. COPYRIGHT: (C)2005,JPO&NCIPI
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