| 摘要 |
PROBLEM TO BE SOLVED: To suppress temperature rise in an element without deteriorating modulation efficiency. SOLUTION: A groove 19 is formed along a boundary between mesa stripe structure consisting of an n-InP clad layer 12, an undoped InGaAsP light confinement layer 13, an undoped InGaAsP light absorption layer 14, an undoped InGaAsP light confinement layer 15, a p-InP clad layer 16, and a p-InGaAs contact layer 17 and a half-insulating InP layer 18 and a burying material 20 whose dielectric constant is lower than that of the semi-insulating InP layer 18 is buried in the groove 19. COPYRIGHT: (C)2005,JPO&NCIPI
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