| 摘要 |
PROBLEM TO BE SOLVED: To provide a method by which a low-loss semiconductor device can be manufactured by suppressing the deterioration of the interface of a gate insulating film caused by high-temperature heat treatment performed in an electrode forming process. SOLUTION: In this method, the gate insulating film is formed on an SiC substrate, and gate electrodes are formed on parts of the SiC substrate so as to sandwich the gate insulating film. Then source-drain regions are formed in the parts of the SiC substrate, and source-drain electrodes are respectively formed on the source-drain regions. Thereafter, the source-drain electrodes are alloyed by performing first annealing, and second annealing is performed by exposing the SiC substrate to an atmosphere containing an oxidizing gas at a temperature of 500-1,000°C. COPYRIGHT: (C)2005,JPO&NCIPI
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