发明名称 Memory built-in self repair (MBISR) circuits/devices and method for repairing a memory comprising a memory built-in self repair (MBISR) structure
摘要 A method for repairing a memory comprising a Memory Built-In Self Repair (MBISR) structure comprises the steps of detection of defective storage cells, and redundancy allocation. The redundancy allocation step is carried out in such a way that it combines a row and/or column oriented redundancy repair approach with a word oriented redundancy repair approach. A Memory Built-In Self Repair (MBISR) device comprises at least one memory (2) with row and/or column redundancy, at least one row and/or column Memory Built-In Self Repair (MBISR) circuit (3), and a word redundancy block (4). Furthermore, a distributed MBISR structure as well as dedicated Column/Row MBISR circuits (3) are provided.
申请公布号 US2004225912(A1) 申请公布日期 2004.11.11
申请号 US20040777025 申请日期 2004.02.11
申请人 RONZA MARIO DI;MARTELLONI YANNICK 发明人 RONZA MARIO DI;MARTELLONI YANNICK
分类号 G11C29/00;H02H3/05;(IPC1-7):H02H3/05 主分类号 G11C29/00
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