| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor laser device which can suppress crosstalk influence while keeping high the relative position accuracy of a plurality of laser elements. <P>SOLUTION: A plurality of light emitting parts 12a, 13a are first formed on a single substrate 21, and the substrate is mounted on a submount 11. And the substrate 21 mounted on the submount 11 is cut at a midpoint M between the light emitting parts 12a, 13a. Since a laser device thus manufactured comprises two monolithically-formed laser elements 12, 13, the relative position accuracy between the elements can be increased. Since the substrate 21 is separated between the laser elements 12, 13, the conduction of heat or electricity to the substrate 21 can be prevented and electrical crosstalk can be largely suppressed. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
