| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a simply structured semiconductor device capable of stabilizing a zero crossing operation. <P>SOLUTION: The bidirectional thyrister 1 is composed of thyristers T1, T2 inversely connected in parallel, resisters R1, R2, and MOSFETs M1, M2 formed on a semiconductor substrate 2. The resisters R1, R2 and the MOSFETs M1, M2 are respectively connected between gates 4a, 4b and cathodes 7a, 7b of the respective thyristers T1, T2; and gates 13a, 13b of the respective MOSFETs M1, M2 are respectively connected to anodes 3a, 3b of the thyristers T1, T2. A diffusion depth of at least drains 9a, 9b of the MOSFETs M1, M2 or sources 8a, 8b of the MOSFETs M1, M2 is shallower than that of cathodes 7a, 7b of the thyristers T1, T2. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
