| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which generates no air gap in a via hole and has few number of processes required for plating growth. SOLUTION: After the via hole 3 penetrating through a semiconductor substrate 1 is formed in the substrate 1, an insulating resin holder 10 for plating for reinforcing the substrate 1 is fixed to the substrate 1 with the surface and the back side of the substrate 1 sandwiched. After that, plating liquid is made to flow in the via hole 3 from a hole 17 of the holder 10 for plating to grow the plating film in the part other than a part on which a photoresist mask 8 is formed on the surface of the substrate 1 and in the vial hole 3 of the substrate 1. COPYRIGHT: (C)2005,JPO&NCIPI
|
