| 摘要 |
PROBLEM TO BE SOLVED: To surely discharge signal charge to a substrate only by an operation voltage for normal use without using a high voltage for a period of sweeping out. SOLUTION: A p-type well region 5 is arranged in an n-type well region 7 on a p-type semiconductor substrate 8. A plurality of unit pixels 3 having light receiving diodes 1 and MOS transistors 2 for optical signal detection are arranged in the p-type well region 5. The n-type well region 7 is isolated from a drain region 23 which is collectively formed in an unified body with an n-type dopant diffusion region 6 by the p-type well region 5. As a result, low potential can be impressed to the n-type well region 7 rather than the drain region 23 at the period of sweeping out, and high potential can be impressed to the n-type well region 7 rather than the drain region 23 at a readout period. COPYRIGHT: (C)2005,JPO&NCIPI
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