| 发明名称 |
Method for increasing polysilicon granin size |
| 摘要 |
The present invention relates to a method for increasing the grain size of a polysilicon layer, which includes exposing a silicon oxide wafer in a deposition chamber to an amount, effective for the purpose, of nitrogen at a flow rate of at least about 240 standard liters per minute (slm).
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| 申请公布号 |
US2004224533(A1) |
申请公布日期 |
2004.11.11 |
| 申请号 |
US20030431120 |
申请日期 |
2003.05.07 |
| 申请人 |
HUANG YAO-HUI;LEE TUNG-LI;LIN CHIH-HAO;LIN YEN-FEI;SUN JAMES;CHEN BU-FUN;HUANG DAVID |
发明人 |
HUANG YAO-HUI;LEE TUNG-LI;LIN CHIH-HAO;LIN YEN-FEI;SUN JAMES;CHEN BU-FUN;HUANG DAVID |
| 分类号 |
C23C16/02;C23C16/24;H01L21/285;(IPC1-7):H01L21/31;H01L21/469 |
主分类号 |
C23C16/02 |
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