发明名称 HIGHLY ADAPTABLE HETEROGENEOUS POWER AMPLIFIER IC MICRO-SYSTEMS USING FLIP CHIP AND MICROELECTROMECHANICAL TECHNOLOGIES ON LOW LOSS SUBSTRATES
摘要 A first MEM (329) having first and second contact is mounted on a substrate. A PA power cell is thermally connected to the substrate using a thermal bump. The power cell has first and second power cell bumps as pathways for I/O functions. A first insulator (319) is mounted on substrate supporting a second MEM (327), having first and second connections, located on a bottom surface. This first conductive via (313) traverses the first insulator and connect the first connection from the second MEM to a first conductor connected to the first power cell bump . The second conductor (335) is connected to a second conductive via (307), which traverses a second insulator. The second conductive via is connected to a first metal member. The second conductive via is connected to a first metal member (305) formed over the upper surface of the second insulator and connected to a first input to the first MEM switch. A second metal member (303) is connected to the second contact of the first MEM switch.
申请公布号 WO2004044986(A9) 申请公布日期 2004.11.11
申请号 WO2003US36629 申请日期 2003.11.13
申请人 RAYTHEON COMPANY 发明人 TONOMURA, SAMUEL D.;ALLISON, ROBERT C.;PIERCE, BRIAN M.
分类号 B81B7/00 主分类号 B81B7/00
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