发明名称 |
LIQUID COMPOSITION FOR FORMING FERROELECTRIC THIN FILM AND METHOD FOR FORMING FERROELECTRIC THIN FILM |
摘要 |
<p>A liquid composition for forming a thin film is disclosed which enables to form a ferroelectric thin film with excellent characteristics even through firing at low temperatures. A method for forming a ferroelectric thin film using such a liquid composition is also disclosed. The liquid composition for forming a ferroelectric thin film is characterized in that ferroelectric oxide particles composed of plate or needle crystals which are represented by the general formula: ABO3 (wherein A represents at least one selected from the group consisting of Ba<2+>, Sr<2+>, Ca<2+>, Pb<2+>, La<2+>, K<+> and Na<+>, and B represents at least one selected from the group consisting of Ti<4+>, Zr<4+>, Nb<5+>, Ta<5+> and Fe<3+>) and have a perovskite structure, an average primary particle diameter of not more than 100 nm and an aspect ratio of not less than 2 are dispersed in a liquid medium and a soluble metal compound which forms a ferroelectric oxide when heated is further dissolved in the liquid medium.</p> |
申请公布号 |
WO2004097854(A1) |
申请公布日期 |
2004.11.11 |
申请号 |
WO2004JP05913 |
申请日期 |
2004.04.23 |
申请人 |
ASAHI GLASS COMPANY LIMITED;SUNAHARA, KAZUO;TOMONAGA, HIROYUKI;BEPPU, YOSHIHISA |
发明人 |
SUNAHARA, KAZUO;TOMONAGA, HIROYUKI;BEPPU, YOSHIHISA |
分类号 |
C01G23/00;C01G25/00;C01G33/00;C01G35/00;C01G49/00;C23C18/12;H01L21/316;(IPC1-7):H01B3/00;H01B3/12;C01B13/14;H01L27/10 |
主分类号 |
C01G23/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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