发明名称 LIQUID COMPOSITION FOR FORMING FERROELECTRIC THIN FILM AND METHOD FOR FORMING FERROELECTRIC THIN FILM
摘要 <p>A liquid composition for forming a thin film is disclosed which enables to form a ferroelectric thin film with excellent characteristics even through firing at low temperatures. A method for forming a ferroelectric thin film using such a liquid composition is also disclosed. The liquid composition for forming a ferroelectric thin film is characterized in that ferroelectric oxide particles composed of plate or needle crystals which are represented by the general formula: ABO3 (wherein A represents at least one selected from the group consisting of Ba&lt;2+&gt;, Sr&lt;2+&gt;, Ca&lt;2+&gt;, Pb&lt;2+&gt;, La&lt;2+&gt;, K&lt;+&gt; and Na&lt;+&gt;, and B represents at least one selected from the group consisting of Ti&lt;4+&gt;, Zr&lt;4+&gt;, Nb&lt;5+&gt;, Ta&lt;5+&gt; and Fe&lt;3+&gt;) and have a perovskite structure, an average primary particle diameter of not more than 100 nm and an aspect ratio of not less than 2 are dispersed in a liquid medium and a soluble metal compound which forms a ferroelectric oxide when heated is further dissolved in the liquid medium.</p>
申请公布号 WO2004097854(A1) 申请公布日期 2004.11.11
申请号 WO2004JP05913 申请日期 2004.04.23
申请人 ASAHI GLASS COMPANY LIMITED;SUNAHARA, KAZUO;TOMONAGA, HIROYUKI;BEPPU, YOSHIHISA 发明人 SUNAHARA, KAZUO;TOMONAGA, HIROYUKI;BEPPU, YOSHIHISA
分类号 C01G23/00;C01G25/00;C01G33/00;C01G35/00;C01G49/00;C23C18/12;H01L21/316;(IPC1-7):H01B3/00;H01B3/12;C01B13/14;H01L27/10 主分类号 C01G23/00
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