METHOD FOR MANUFACTURING SILICON NITRIDE FILM BY VAPOR GROWTH METHOD

摘要

PROBLEM TO BE SOLVED: To provide a method capable of manufacturing a silicon nitride film having more excellent film characteristics even at comparatively low temperature without generating ammonium chloride and significantly mixing carbon group contaminations into the generated film. SOLUTION: At least one sort of precursor gas selected from the group consisting of trisilylamine gas and silylhydrazine gas and hydrazine gas are supplied to a reaction chamber (11) for storing at least one substrate (112) and the gas phase reaction of both the gas components is performed to form a silicon nitride film on the substrate (112). The silicon nitride film can be also generated only from silylhydrazine gas by thermal decomposition. COPYRIGHT: (C)2005,JPO&NCIPI