发明名称 |
Beam source and beam processing apparatus |
摘要 |
A beam source has a plasma generating chamber and a gas inlet port for introducing a gas into the plasma generating chamber. The beam source includes a plasma generator for generating positive-negative ion plasma containing positive ions at a density of at least 10<10 >ions/cm<3 >and negative ions from the gas. The beam source also includes a plasma potential adjustment electrode disposed in the plasma generating chamber and a grid electrode having a plurality of beam extraction holes formed therein. The beam extraction holes have a diameter of at least 0.5 mm. The beam source has a first power supply for applying a voltage of at most 500 V between the plasma potential adjustment electrode and the grid electrode.
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申请公布号 |
US2004222367(A1) |
申请公布日期 |
2004.11.11 |
申请号 |
US20040797723 |
申请日期 |
2004.03.11 |
申请人 |
ICHIKI KATSUNORI;SHIBATA AKIO;FUKUDA AKIRA;HIYAMA HIROKUNI;YAMAUCHI KAZUO;SAMUKAWA SEIJI |
发明人 |
ICHIKI KATSUNORI;SHIBATA AKIO;FUKUDA AKIRA;HIYAMA HIROKUNI;YAMAUCHI KAZUO;SAMUKAWA SEIJI |
分类号 |
B01J3/00;B01J19/12;H01J27/02;H01J27/16;H01J37/08;H01L21/3065;H01S3/00;H05H1/46;(IPC1-7):H01S3/00 |
主分类号 |
B01J3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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