发明名称 Beam source and beam processing apparatus
摘要 A beam source has a plasma generating chamber and a gas inlet port for introducing a gas into the plasma generating chamber. The beam source includes a plasma generator for generating positive-negative ion plasma containing positive ions at a density of at least 10<10 >ions/cm<3 >and negative ions from the gas. The beam source also includes a plasma potential adjustment electrode disposed in the plasma generating chamber and a grid electrode having a plurality of beam extraction holes formed therein. The beam extraction holes have a diameter of at least 0.5 mm. The beam source has a first power supply for applying a voltage of at most 500 V between the plasma potential adjustment electrode and the grid electrode.
申请公布号 US2004222367(A1) 申请公布日期 2004.11.11
申请号 US20040797723 申请日期 2004.03.11
申请人 ICHIKI KATSUNORI;SHIBATA AKIO;FUKUDA AKIRA;HIYAMA HIROKUNI;YAMAUCHI KAZUO;SAMUKAWA SEIJI 发明人 ICHIKI KATSUNORI;SHIBATA AKIO;FUKUDA AKIRA;HIYAMA HIROKUNI;YAMAUCHI KAZUO;SAMUKAWA SEIJI
分类号 B01J3/00;B01J19/12;H01J27/02;H01J27/16;H01J37/08;H01L21/3065;H01S3/00;H05H1/46;(IPC1-7):H01S3/00 主分类号 B01J3/00
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