发明名称 |
SILICON CARBIDE MOSFETS WITH INTEGRATED ANTIPARALLEL JUNCTION BARRIER SCHOTTKY FREE WHEELING DIODES AND METHODS OF FABRICATING SAME |
摘要 |
Silicon carbide semiconductor devices and methods of fabricating silicon carbide semiconductor devices have a silicon carbide DMOSFET and an integral silicon carbide Schottky diode configured to at least partially bypass a built in diode of the DMOSFET. The Schottky diode may be a junction barrier Schottky diode and may have a turn-on voltage lower than a turn-on voltage of a built-in body diode of the DMOSFET. The Schottky diode may have an active area less than an active area of the DMOSFET. |
申请公布号 |
WO2004097944(A2) |
申请公布日期 |
2004.11.11 |
申请号 |
WO2004US04892 |
申请日期 |
2004.02.19 |
申请人 |
CREE INC.;RYU, SEI-HYUNG |
发明人 |
RYU, SEI-HYUNG |
分类号 |
H01L21/04;H01L29/24;H01L29/78;H01L29/872 |
主分类号 |
H01L21/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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