METHOD FOR FORMING METAL INTERCONNECTION OF SEMICONDUCTOR DEVICE TO REDUCE EM PHENOMENON AND LEAKAGE CURRENT

摘要

PURPOSE: A method for forming a metal interconnection of a semiconductor device is provided to reduce an EM(electromigration) phenomenon and a leakage current by making a damaged part near a contact hole(or a via hole) filled with a tungsten layer with good step coverage even when a misalignment occurs in etching the contact hole or the via hole for forming a metal interconnection. CONSTITUTION: A predetermined interlayer dielectric(21) is formed on a predetermined underlying layer(20) and is selectively etched to form a contact hole. A barrier metal layer and a main metal layer are sequentially formed on the resultant structure. The main metal layer is selectively etched to form a main metal layer pattern(23). A tungsten layer spacer(26) is formed on the sidewall of the main metal layer pattern. The exposed barrier metal layer is etched.