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发明名称
Verfahren zu Herstellung eines monokristallinen Halbleiterwafers mit hochglanzpolierter Oberfläche, unter Benutzung eines Gasphasen-Ätz- und eines Aufwärm-Schrittes, und durch dieses Verfahren hergestellter Wafer
摘要
申请公布号
DE69731019(D1)
申请公布日期
2004.11.11
申请号
DE1997631019
申请日期
1997.03.26
申请人
SHIN-ETSU HANDOTAI CO., LTD.
发明人
OISHI, HIROSHI
分类号
H01L21/302;C30B33/00;H01L21/304;H01L21/3065;(IPC1-7):H01L21/304
主分类号
H01L21/302
代理机构
代理人
主权项
地址
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