| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which uses a MOS transistor for driving which can be easily increased in the channel width per unit area and is easily mix-mounted on one chip together with a logic circuit section. SOLUTION: The semiconductor device comprises a plurality of concave portions 6 which are formed in the front surface of a semiconductor substrate between two separate source and drain regions 1 formed in the front surface of the semiconductor substrate, in the channel length direction of linearly connecting the highly doped regions, and which are arranged in the channel width direction; an insulation film 3 formed on the front surface of the semiconductor substrate between the source and drain regions including the concave portions; and a gate electrode 2 formed on top of the insulation film. COPYRIGHT: (C)2005,JPO&NCIPI
|
