| 摘要 |
PROBLEM TO BE SOLVED: To obtain an SOI (silicon-on-insulator) substrate having an improved electric characteristic such as oxide film breakdown voltage even in a silicon wafer worked from a region where oxygen deposition is promoted by a result that oxygen is diffused to the outside from the surface of the silicon wafer, BMD density increases and a non-defect layer is formed. SOLUTION: A silicon wafer is worked from a silicon single crystal on which a COP (Crystal Originated Particle) dose not exist. After that, thermal processing is performed to this silicon wafer in an inert gas atmosphere. By doing this, oxygen can be efficiently diffused from the surface of the silicon wafer to the outside. The SOI substrate is produced using as this silicon wafer as a silicon wafer for an active layer. As this result, the electric characteristic such as oxide film breakdown voltage of the SOI substrate is improved even in the silicon wafer worked from a region where the oxygen deposition is promoted. COPYRIGHT: (C)2005,JPO&NCIPI
|
