| 摘要 |
PROBLEM TO BE SOLVED: To provide an optical semiconductor element in which the electrostatic capacitance between upper and lower electrode films can be suppressed to a small value, and to provide a method of manufacturing optical semiconductor element. SOLUTION: In a semiconductor laser 100, an i-type InP layer 11 is disposed below a pad section 18-1. The InP layer 11 has a small dielectric constant and reduces the electrostatic capacitance between the pad section 18-1 and a third electrode film 19. In addition, when the InP layer 11 is interposed between the pad section 18-1 and the third electrode film 19, the interval between the section 18-1 and the film 19 is expanded, and the electrostatic capacitance between the section 18-1 and film 19 is further reduced. COPYRIGHT: (C)2005,JPO&NCIPI
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