发明名称 |
Method for detecting a resistive path or a predetermined potential in non-volatile memory electronic devices |
摘要 |
The invention relates to a method for pinpointing erase-failed memory cells and to a relevant integrated non-volatile memory device, of the programmable and electrically erasable type comprising a sectored array of memory cells arranged in rows and columns, with at least one row-decoding circuit portion per sector being supplied positive and negative voltages. This method becomes operative upon a negative erase algorithm issue, and comprises the following steps: forcing the read condition of a sector that has not been completely erased; scanning the rows of said sector to check for the presence of a spurious current indicating a failed state; finding the failed row and electrically isolating it for re-addressing the same to a redundant row provided in the same sector.
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申请公布号 |
US2004223399(A1) |
申请公布日期 |
2004.11.11 |
申请号 |
US20030675805 |
申请日期 |
2003.09.30 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
CAMPARDO GIOVANNI;MICHELONI RINO |
分类号 |
G11C8/02;G11C29/00;G11C29/02;(IPC1-7):G11C8/02 |
主分类号 |
G11C8/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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