| 摘要 |
PROBLEM TO BE SOLVED: To provide a photodiode having a structure insusceptible to electromagnetic noise and requiring no shield case. SOLUTION: An n-type layer is formed on a p-type substrate becoming a first p-type layer, the n-type layer is isolated from the edge by providing a p-type isolation belt around the n-type layer, a second p-type layer is formed in contact with the p-type isolation belt while leaving a part thereof on the n-type layer, and covered with a protective film layer. First and second electrodes are provided on the protective film layer, the first electrode is connected with the n-type layer through an opening formed in the protective film layer, and the second electrode is connected with the p-type isolation belt. The second electrode is connected with the ground potential, the first and second p-type layers are brought to the ground potential, and charges generated through photoelectric conversion are outputted from the first electrode. Since the second p-type layer is connected with the ground potential and has a low impedance, it exhibits shield effect and electromagnetic noise from the surface is shielded. COPYRIGHT: (C)2005,JPO&NCIPI
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