| 摘要 |
PROBLEM TO BE SOLVED: To make thickness variance of a substrate (specially, a semiconductor substrate) uniform, to prevent the substrate from waving and curving, and to easily realize fast flattening free of restrictions of design at low cost without causing any trouble such as dishing. SOLUTION: A material for an insulating film 41 in which a wire 41 is buried is obtained by dispersing a filler 72 of, for example, alumina, silica, glass, etc., having higher hardness of resin 7 in resin 71. Here, the resin 71 is selected while taking into consideration of a swell formed after flattening processing by cutting process. Further, the filler 72 has its maximum size (maximum filler diameter) (d)≤1/2 (d≤L/2) time as large as the minimum interval L of the wire 41. COPYRIGHT: (C)2005,JPO&NCIPI
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