发明名称 Gapfill process using a combination of spin-on-glass deposition and chemical vapor deposition techniques
摘要 A method of filling a plurality of trenches etched in a substrate. In one embodiment the method includes depositing a layer of spin-on glass material over the substrate and into the plurality of trenches; exposing the layer of spin-on glass material to a solvent; curing the layer of spin-on glass material; and depositing a layer of silica glass over the cured spin-on glass layer using a chemical vapor deposition technique.
申请公布号 US2004224496(A1) 申请公布日期 2004.11.11
申请号 US20030730193 申请日期 2003.12.05
申请人 APPLIED MATERIALS, INC. 发明人 CUI ZHENJIANG;ROBERTS RICK J.;COX MICHAEL S.;ZHAO JUN
分类号 H01L21/762;H01L21/768;(IPC1-7):H01L21/476;H01L21/31;H01L21/469 主分类号 H01L21/762
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