发明名称 |
Gapfill process using a combination of spin-on-glass deposition and chemical vapor deposition techniques |
摘要 |
A method of filling a plurality of trenches etched in a substrate. In one embodiment the method includes depositing a layer of spin-on glass material over the substrate and into the plurality of trenches; exposing the layer of spin-on glass material to a solvent; curing the layer of spin-on glass material; and depositing a layer of silica glass over the cured spin-on glass layer using a chemical vapor deposition technique.
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申请公布号 |
US2004224496(A1) |
申请公布日期 |
2004.11.11 |
申请号 |
US20030730193 |
申请日期 |
2003.12.05 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
CUI ZHENJIANG;ROBERTS RICK J.;COX MICHAEL S.;ZHAO JUN |
分类号 |
H01L21/762;H01L21/768;(IPC1-7):H01L21/476;H01L21/31;H01L21/469 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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