| 摘要 |
The present invention provides a method for manufacturing bipolar transistors having reduced parasitic resistance and therefore improved performance compared to conventionally made bipolar transistors. Dry etching of a compound semiconductor in the transistor allows a perimeter of the compound semiconductor layer to be substantially coextensive with a perimeter of an overlying metal layer. This, in turn, reduces the gap between the compound semiconductor and subsequently deposited metal layer to be minimized, thereby reducing the parasitic resistance of the bipolar transistor.
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