| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a back-surface irradiation type photodetector by which a manufacturing step can be simplified and a manufacturing cost be reduced. SOLUTION: A CCD 3 is formed on the front side of a semiconductor substrate 1. An area corresponding the CCD 3 on the back side of the semiconductor substrate 1 is made thin while a peripheral area 1a of the area is left as it is, thereby forming an accumulation layer 5 on the back side thereof. Next, an electric wiring 7 connected electrically with the CCD 3 and an electrode pad 9 connected electrically with the wiring 7 are formed in an area 1b corresponding to the peripheral area 1a on the front side of the semiconductor substrate 1, and the electrode pad 9 is exposed and a supporting substrate 11 is adhered to the front side of the semiconductor substrate 1 so as to cover the CCD 3. Then, the semiconductor substrate 1 and the supporting substrate 11 are cut at a part where the semiconductor substrate 1 is made thin so that the peripheral area 1a corresponding to the area 1b where the electric wiring 7 and the electrode pad 9 are formed may be left as it is. COPYRIGHT: (C)2005,JPO&NCIPI |
